Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices
Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices
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点缺陷控制的CZ-Si晶体的发展及其在未来功率器件中的应用的回顾和评论
DOI：
10.1002/pssa.201800664
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
S. Umeno
中科院分区：
文献类型：
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作者：
M. Hourai;Toru Nagashima;Hideshi Nishikawa;W. Sugimura;T. Ono;S. Umeno
通过v/G控制开发点缺陷控制的直拉硅（CZ-Si）晶体生长技术，即，综述了晶体在熔点附近的生长速率（v）与轴向温度梯度（G）之比，并提出了氮和氢掺杂技术，用于300 mm无生长缺陷且氧含量极低的外加磁场CZ-Si（MCZ-Si）晶体，以应用于未来的硅功率器件，如绝缘栅双极晶体管（IGBT）。使用在晶体径向上具有均匀的G分布的热区，通过将v控制在空位量与自晶量平衡的临界值附近来维持v/G，从而抑制诸如空隙和位错簇的生长缺陷的产生。氮掺杂或氢掺杂技术与v/G控制相结合还可以扩大无缺陷MCZ-Si晶体的工艺窗口，可用作浮区硅晶体的替代材料。从保证未来IGBT更高性能所需的晶体质量的角度讨论了这两种技术的优缺点。
Development of point defect‐controlled Czochralski silicon (CZ‐Si) crystal growth technology by v/G control, i.e., the ratio of growth rate (v) to the axial temperature gradient (G) in the crystal near its melting point, is reviewed and nitrogen‐ and hydrogen‐doping technologies are proposed for 300‐mm magnetic‐field‐applied CZ‐Si (MCZ‐Si) crystals free of grown‐in defects with very low oxygen for application to future silicon power devices such as insulated gate bipolar transistors (IGBTs). Using a hot zone with a uniform G distribution in a crystal radial direction, v/G is maintained by controlling v of around the critical value at which the amount of vacancies is balanced with that of self‐interstitials so that the generation of grown‐in defects, such as voids and dislocation clusters, are suppressed. Nitrogen‐doping or hydrogen‐doping technology combined with v/G control also enables the enlarging of the process window for grown‐in defect‐free MCZ‐Si crystals that can be used as an alternative material to floating zone‐Si crystals. The advantages and disadvantages of both technologies are discussed from the view point of crystal quality required to guarantee higher performance of future IGBTs.