Landau-level populations and slow energy relaxation of a two-dimensional electron gas probed by tunneling spectroscopy.

Landau-level populations and slow energy relaxation of a two-dimensional electron gas probed by tunneling spectroscopy.
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通过隧道光谱探测二维电子气的朗道能级布居和缓慢能量弛豫。

DOI:
10.1103/physrevb.52.4666
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发表时间:
1995
期刊:
Physical review. B, Condensed matter
影响因子:
--
通讯作者:
Henini
Henini
中科院分区:
--
文献类型:
--
作者:
Neves;Môri;Beton;Eaves;Wang;Henini

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被引文献

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在接近共振隧穿阈值的电压范围内,研究了平行于电流方向的磁场对双势垒GaAsAlAs异质结器件的隧穿电流的影响。随着朗道量子数的变化,电流中的附加峰值对应于从发射极-累积层到量子阱的隧道跃迁。数据分析表明,发射极蓄积层最低的两个朗道能级的电子布居远离热平衡。在≥4T场,这些能级之间的朗道能级间跃迁时间估计超过100 ns。
The tunnel current in a double-barrier GaAs/AlAs heterostructure device is investigated in the voltage range close to the threshold for resonant tunneling and as a function of magnetic field applied parallel to the current direction. Additional peaks in the current are observed that correspond to tunneling transitions from the emitter-accumulation layer to the quantum well with a change of Landau quantum number. Analysis of the data indicates that the electron population in the two lowest Landau levels of the emitter-accumulation layer is far from thermal equilibrium. The inter-Landau-level transition time between these levels is estimated to be in excess of 100 ns at fields≥ 4 T.