The impact of thermal annealing and adhesion film thickness on the resistivity and the agglomeration behavior of titanium/platinum thin films
The impact of thermal annealing and adhesion film thickness on the resistivity and the agglomeration behavior of titanium/platinum thin films
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DOI：
10.1063/1.2838229
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发表时间：
2008-03
影响因子：
3.2
通讯作者：
U. Schmid
中科院分区：
文献类型：
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作者：
U. Schmid
在这项研究中，沉积后退火（PDA）的温度高达TPDA=900 °C的电子束蒸发的钛/铂（Ti/Pt）双层的室温电阻率的影响进行了研究。粘合促进剂的厚度固定为df，Ti=15 nm。相反，Pt层在df，Pt=23和90 nm之间变化。在“沉积”状态下，从厚度相关的电学测量中提取出18 nm的电子的有效平均自由程，与理论预测合理一致。直到TPDA=450 °C，铂膜厚度的倒数和相应的电阻率之间的依赖性是线性的，正如从尺寸效应所预期的。在TPDA=450 °C时，电阻率显著增加，与Pt膜厚度无关。由于钛向顶层中的扩散增强，与具有5或10 nm的较低助粘剂厚度的那些样品相比，在具有df，Ti=15 nm的样品处，电导率优先降低。个...
In this study, the influence of postdeposition annealings (PDA) up to temperatures of TPDA=900 °C on the room-temperature resistivity of e-beam evaporated titanium/platinum (Ti/Pt) bilayers on Si/SiO2 substrates is investigated. The thickness of the adhesion promoter is fixed to df,Ti=15 nm. In contrast, the Pt layer is varied between df,Pt=23 and 90 nm. In the “as deposited” state, an effective mean-free path for the electrons of 18 nm is extracted from the thickness-dependent electrical measurements, in reasonable agreement with theoretical predictions. Up to TPDA=450 °C, the dependence between the reciprocal platinum film thickness and the corresponding resistivity is linear, as expected from the size effect. At TPDA=450 °C, the resistivity is substantially increased independent of Pt film thickness. Due to an enhanced diffusion of titanium into the top layer the conductivity decreases preferentially at samples with df,Ti=15 nm compared to those with a lower adhesion promoter thickness of 5 or 10 nm. A...