Electroless Copper Deposition Using Glyoxylic Acid as Reducing Agent for Ultralarge Scale Integration Metallization
Electroless Copper Deposition Using Glyoxylic Acid as Reducing Agent for Ultralarge Scale Integration Metallization
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DOI：
10.1149/1.1391124
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发表时间：
1999
影响因子：
--
通讯作者：
Y. Shacham-Diamand
中科院分区：
文献类型：
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作者：
Y. Shacham-Diamand
从含有乙醛酸作为还原剂的溶液中化学镀铜形成了与用于集成电路和微机电系统应用的超大规模集成技术兼容的保形薄膜。乙醛酸是一种替代还原剂，可替代甲醛用于碱性硫酸铜基溶液，而不会影响薄膜性能和加工能力。在钯活化的硅表面上以及在由铜或钴的薄层活化的氧化物膜上沉积无电铜。从乙醛酸基溶液中沉积的厚度大于300 nm的薄铜膜的电阻率在沉积时为2.3-2.4 μ m/cm，在200 ℃退火30 min后为1.9-2.0 μ m/cm。在简单的低功率下，随着膜厚度的减小，更薄的膜的电阻率增加。从乙醛酸溶液中通过接触沉积无电镀铜，直径为0.2 µm，纵横比高达4：1。存款是光滑和保形的。© 2000电化学学会。S1099-0062（99）12-007-8。All rights reserved.
Electroless copper from solutions that contain glyoxylic acid as reducing agent formed a conformal thin film compatible with very large scale integrated technology for integrated circuits and microelectromechanical systems applications. Glyoxylic acid is an alternative reducing agent that can replace formaldehyde for basic copper sulfate based solutions without compromising thin film properties and process capabilities. Electroless copper was deposited on a silicon surface activated with palladium as well as on an oxide film activated by a thin layer of copper or cobalt. The resistivity of thin copper film, thicker than 300 nm, deposited from glyoxylic based solution was 2.3-2.4 µΩ cm as deposited, and 1.9-2.0 µΩ cm after a 200 C anneal for 30 min. Thinner film resistivity increased as film thickness decreased following a simple power low. Electroless copper was deposited from solution with glyoxylic acid into via contact of 0.2 µm diam and up to 4: 1 aspect ratio. The deposit was smooth and conformal.© 2000 The Electrochemical Society. S1099-0062 (99) 12-007-8. All rights reserved.