Ti–Si–C–N thin films grown by reactive arc evaporation from Ti_3SiC_2 cathodes
Ti–Si–C–N thin films grown by reactive arc evaporation from Ti_3SiC_2 cathodes
复制标题
DOI：
10.1557/jmr.2011.10
复制
发表时间：
2011-04
影响因子：
2.7
通讯作者：
A. Eriksson;Jianqiang Zhu;N. Ghafoor;J. Jensen;G. Greczynski;M. Johansson;J. Sjoelen;M. Odén;L. Hultman;J. Rosen
中科院分区：
文献类型：
--
作者：
A. Eriksson;Jianqiang Zhu;N. Ghafoor;J. Jensen;G. Greczynski;M. Johansson;J. Sjoelen;M. Odén;L. Hultman;J. Rosen
Ti-Si-C-N 薄膜通过工业规模电弧蒸发从 Ti_3SiC_2 化合物阴极在 N_2 气体中沉积到 WC-Co 基底上。研究发现，微观结构和硬度高度依赖于所获得的各种薄膜成分，包括高达 12 at.% Si 和 16 at.% C。非反应沉积产生的薄膜由低于化学计量的 TiC_x、Ti 和硅化物相组成，具有高硬度 (27 GPa)。在0.25-0.5 Pa的氮气压力下，低于N饱和所需的压力，形成具有纳米晶羽状结构的超硬、45-50 GPa的(Ti,Si)(C,N)薄膜。在 2 Pa 以上生长的薄膜显示出具有更明显氮化物特征的结晶相，但 C 和 Si 偏析到晶界，形成弱晶界相。当 N 含量丰富时，Si 和 C 的共同存在会严重干扰立方相的生长，并损害薄膜的机械强度。
Ti–Si–C–N thin films were deposited onto WC-Co substrates by industrial scale arc evaporation from Ti_3SiC_2 compound cathodes in N_2 gas. Microstructure and hardness were found to be highly dependent on the wide range of film compositions attained, comprising up to 12 at.% Si and 16 at.% C. Nonreactive deposition yielded films consisting of understoichiometric TiC_x, Ti, and silicide phases with high (27 GPa) hardness. At a nitrogen pressure of 0.25–0.5 Pa, below that required for N saturation, superhard, 45–50 GPa, (Ti,Si)(C,N) films with a nanocrystalline feathered structure were formed. Films grown above 2 Pa displayed crystalline phases of more pronounced nitride character, but with C and Si segregated to grain boundaries to form weak grain boundary phases. In abundance of N, the combined presence of Si and C disturbs cubic phase growth severely and compromises the mechanical strength of the films.