High temperature annealing of bent multicrystalline silicon rods
High temperature annealing of bent multicrystalline silicon rods
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DOI：
10.1016/j.actamat.2012.08.049
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发表时间：
2012-11
期刊：
影响因子：
9.4
通讯作者：
T. Ervik;M. Kivambe;G. Stokkan;B. Ryningen;O. Lohne
中科院分区：
文献类型：
--
作者：
T. Ervik;M. Kivambe;G. Stokkan;B. Ryningen;O. Lohne
研究了900℃四点弯曲变形多晶硅棒高温退火前后的位错蚀坑结构。变形后，大部分位错蚀坑沿{111}面的迹线排列。某些局部区域显示出网状结构，其中腐蚀坑阵列偏离{111}面迹线2-10°。在1350℃保温12h后，位错密度和位错结构发生了明显的变化，不同晶间的位错密度和结构也不同。部分颗粒呈不完整的多角形结构，有明显的不规则和Y形连接。将结果与太阳能电池用铸态工业多晶硅晶片的观察结果进行了比较，发现了类似的不完全多晶化结构。
Dislocation etch-pit structures on multicrystalline silicon rods deformed at 900°C in four-point bending were studied prior to and after a high-temperature annealing. After deformation, the majority of the dislocation etch-pits were aligned along traces of {111} planes. Certain localized areas revealed network structures, where etch-pit arrays deviated in the range of 2-10° from the {111} plane traces. After annealing at 1350°C for 12h, a marked change in dislocation density and structure which varied from grain to grain was observed. Some grains showed incomplete polygonized structures, with notable irregularities and Y-junctions. The results were compared with observations on as-cast industrial multicrystalline silicon wafers for solar cells, where similar incomplete polygonized structures can be found.