PVT Tolerant Zero Bit-Error-Rate Physical Unclonable Function Exploiting Hot Carrier Injection Aging in 7nm FinFET Technology
PVT Tolerant Zero Bit-Error-Rate Physical Unclonable Function Exploiting Hot Carrier Injection Aging in 7nm FinFET Technology
复制标题
PVT 容忍零误码率物理不可克隆功能利用 7nm FinFET 技术中的热载流子注入老化
DOI：
10.1109/cicc53496.2022.9772856
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
R. Parker
中科院分区：
文献类型：
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作者：
J. Velamala;Siang;P. Penmatsa;K. Shen;D. Johnston;R. Parker
集成电路安全应用通常要求每个管芯上都有唯一的ID，以便在产品的整个生命周期内可靠地读取[1]。物理不可克隆函数(PUF)是低成本的加密原语，用于为设备身份验证和安全通信生成唯一、稳定和安全的ID[2][3]。PUF依赖于制造流程中固有的随机工艺变化，使得无法预测或克隆芯片ID，从而提供高级别的安全性和防篡改[1]。1KB PUF阵列采用Intel的7 nm FinFET技术制造，具有(I)基于混合SRAM的PUF[1][2]和(Ii)新的仅NFET PUF，具有利用热载流子注入(HCI)的新型应力操作。
Integrated circuit security applications often require a unique ID on each die that can be read reliably over the lifetime of the product [1]. Physical Unclonable Functions (PUFs) are low-cost cryptographic primitives used to generate unique, stable, and secure IDs for device authentication and secure communication [2] [3]. PUFs rely on random process variations inherent in the manufacturing flow making it impossible to predict, or clone chip IDs, providing a high level of security and tamper resistance [1]. 1kb PUF arrays are fabricated in Intel's 7nm FinFET technology featuring (i) a hybrid-SRAM based PUF [1] [2] and (ii) a new NFET only PUF with a novel stress operation exploiting Hot Carrier Injection (HCI).