THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
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DOI：
10.1002/j.1538-7305.1949.tb03645.x
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发表时间：
1949-01-01
影响因子：
--
通讯作者：
SHOCKLEY, W
中科院分区：
文献类型：
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作者：
SHOCKLEY, W
在半导体单晶中，杂质浓度可以从MP型到TON型变化，从而产生机械连续的整流结。发展了结的电势分布和整流理论，重点讨论了锗。N型材料中空穴的扩散和P型材料中电子的扩散携带了穿过结的电流，导致简单情况下的导纳变化为(1+iωτp)1/2，其中τp是当时区域中空穴的寿命。当发生空穴或电子注入时，不带电流的结两端的接触电势可能会产生。介绍了AP-n-P晶体管的工作原理和工作原理。
In a single crystal of semiconductor the impurity concentration may vary fromp‐type ton‐type producing a mechanically continuous rectifying junction. The theory of potential distribution and rectification forp‐njunctions is developed with emphasis on germanium. The currents across the junction are carried by the diffusion of holes inn‐type material and electrons inp‐type material, resulting in an admittance for a simple case varying as (1 +iωτp)1/2where τpis the lifetime of a hole in then‐region. Contact potentials acrossp‐njunctions, carrying no current, may develop when hole or electron injection occurs. The principles and theory of ap‐n‐ptransistor are described.