880 V/2.7 mΩ . cm2 MIS Gate Trench CAVET on Bulk GaN Substrates
880 V/2.7 mΩ . cm2 MIS Gate Trench CAVET on Bulk GaN Substrates
复制标题
DOI：
10.1109/led.2018.2828844
复制
发表时间：
2018-06-01
影响因子：
4.9
通讯作者：
Chowdhury, Srabanti
中科院分区：
文献类型：
--
作者：
Ji, Dong;Agarwal, Anchal;Chowdhury, Srabanti
本文报道了一种以AlGaN/GaN为沟道，原位Si3N4为栅介质层的金属-绝缘体-半导体沟槽电流孔径垂直电子晶体管。器件具有880V的高击穿电压和2.7m欧米伽的低R-on、R-sp值。Cm(2)。由于原位氮化硅的高质量，观察到了类似于0.1V的低磁滞。
In this letter, we report a high-voltage metal-insulator-semiconductor gate trench current aperture vertical electron transistor using metal-organic chemical vapor deposition regrown AlGaN/GaN as the channel and in-situ Si3N4 as the gate dielectric. The device had a high breakdown voltage of 880 V and a low R-on,R-sp of 2.7 m Omega . cm(2). A low hysteresis of similar to 0.1 V was observed due to the high quality of the in situ Si3N4.