Efficient tristable resistive memory based on single layer graphene/insulating polymer multi-stacking layer
Efficient tristable resistive memory based on single layer graphene/insulating polymer multi-stacking layer
复制标题
基于单层石墨烯/绝缘聚合物多层堆叠的高效三稳态电阻存储器
DOI：
10.1063/1.4875596
复制
发表时间：
2014-05-05
影响因子：
4
通讯作者：
Guo, Tailiang
中科院分区：
文献类型：
--
作者：
Wu, Chaoxing;Li, Fushan;Guo, Tailiang
制备了基于单层石墨烯（SLG）/绝缘聚合物多层堆叠结构的三稳态电阻存储器。采用传统的转移法，将化学气相沉积法合成的SLG作为电荷层，与聚甲基丙烯酸甲酯（PMMA）层和聚苯乙烯（PS）层复合，形成不同深度的电荷陷阱。基于PS/SLG/PMMA/SLG/PMMA多层叠层结构，器件具有良好的三稳态存储性能。不同电阻状态之间的比率高达104，保持时间超过104秒。在电流-电压分析的基础上，提出了三稳阻变多层叠层中阶梯充电的工作机理。
Tristable resistive memories based on single layer graphene (SLG)/insulating polymer multi-stacking layer were fabricated. By using the traditional transfer method, the chemical vapor deposition-synthesized SLG serving as charging layers were combined with poly(methyl methacrylate) (PMMA) layers and polystyrene (PS) layers to form charge traps with various depth. Based on the PS/SLG/PMMA/SLG/PMMA multi-stacking layer, the devices exhibited efficient tristable memory performances. The ratios as large as 104 between different resistive states were maintained for a retention time of more than 104 s. The operation mechanisms of stepping-charging in the multi-stacking layer for the tristable resistive switching were proposed on the basis of the current-voltage analysis.