Characteristics of the Tungsten Trioxide Films Fabricated by a Sol-Gel Method
Characteristics of the Tungsten Trioxide Films Fabricated by a Sol-Gel Method
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DOI：
10.2472/jsms.67.853
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发表时间：
2018-09
期刊：
影响因子：
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通讯作者：
K. Koike;S. Murakami;T. Iwata;R. Kamei;M. Yano
中科院分区：
文献类型：
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作者：
K. Koike;S. Murakami;T. Iwata;R. Kamei;M. Yano
采用溶胶-凝胶旋涂法在玻璃衬底上制备了三氧化钨（WO 3）薄膜。分别以偏钨酸铵（AMT）和聚乙烯醇（PVA）为溶质和稳定剂。AMT的优点是在水中的高溶解度，使其具有高浓度和无碱金属水溶液的能力。用X射线衍射、原子力显微镜、光学透射光谱和霍尔效应测量对制备的薄膜进行了表征。通过在空气中烧结该旋涂溶液，获得了a轴取向的正交相多晶WO 3平板薄膜，其带隙能量约为2.8 eV，电子迁移率约为30 cm 2/Vs。这些结果表明，溶胶-凝胶旋涂法制备的WO 3薄膜具有良好的半导体性，可用于电子器件的制备。
This paper describes characteristics of the tungsten trioxide (WO3) films fabricated on a glass substrate by a sol-gel spin-coating method. Ammonium meta-tungstate (AMT) and poly-vinyl alcohol (PVA) were used as the solute and stabilizer materials, respectively. The advantage of AMT is the high solubility in water, giving the capability for highly concentrated and alkali-metal-free aqueous solution. The fabricated films were characterized by x-ray diffraction, atomic force microscopy, optical transmittance spectroscopy, and Hall-effect measurement. By sintering the spin-coated solution in air, a-axis oriented orthorhombic-phase polycrystalline WO3 flat films were obtained with a bandgap energy of ~2.8 eV and a relatively high electron mobility of ~30 cm2/Vs. These results indicate that the sol-gel spin-coating method can be promising for the fabrication of semiconducting WO3 films to apply electronic devices.