Effects of electronic energy deposition on pre-existing defects in 6H–SiC
Effects of electronic energy deposition on pre-existing defects in 6H–SiC
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DOI：
10.1016/j.net.2021.01.017
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发表时间：
2021-01
影响因子：
2.7
通讯作者：
Wenlong Liao;Huan He;Yang Li;Wenbo Liu;H. Zang;Jianan Wei;Chaohui He
中科院分区：
文献类型：
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作者：
Wenlong Liao;Huan He;Yang Li;Wenbo Liu;H. Zang;Jianan Wei;Chaohui He
碳化硅因其优异的性能而被广泛应用于辐射环境中。然而，当暴露在强辐射环境中时，会产生大量的缺陷，从而导致材料性能下降或失效。本文采用双温度模型（2 T-MD）研究了在预损伤体系中引入电子能量损失（Se）后的缺陷恢复过程。研究了缺陷浓度和外加电子能量损失对缺陷恢复过程的影响。结果表明，只有当损伤区的缺陷密度或局部缺陷密度足够大时，缺陷才能恢复，且随着缺陷浓度的增大，缺陷恢复的概率增大。另外，快重离子引起的缺陷恢复主要与碳缺陷的均匀复合有关，而异质复合的几率主要取决于硅缺陷。
Silicon carbide is widely used in radiation environments due to its excellent properties. However, when exposed to the strong radiation environment constantly, plenty of defects are generated, thus causing the material performance downgrades or failures. In this paper, the two-temperature model (2T-MD) is used to explore the defect recovery process by applying the electronic energy loss (Se) on the pre-damaged system. The effects of defect concentration and the applied electronic energy loss on the defect recovery process are investigated, respectively. The results demonstrate that almost no defect recovery takes place until the defect density in the damage region or the local defect density is large enough, and the probability of defect recovery increases with the defect concentration. Additionally, the results indicate that the defect recovery induced by swift heavy ions is mainly connected with the homogeneous recombination of the carbon defects, while the probability of heterogeneous recombination is mainly dependent on the silicon defects.