Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature
Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature
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DOI：
10.1103/physrevb.103.134408
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发表时间：
2021-04-07
影响因子：
3.7
通讯作者：
Tortarolo, M.
中科院分区：
文献类型：
--
作者：
Helman, C.;Camjayi, A.;Tortarolo, M.
我们提出了一个实验和理论研究的异常霍尔效应（AHE）在GaAs上生长的MnAs外延层，其目的是确定本征的贡献AHE，这可以准确地评估使用从头计算电子结构计算。我们的磁输运测量显示了二次行为的霍尔电阻率与纵向电阻率，散射独立的过程的特点，从而使我们的从头计算的比较。计算的Berry相贡献的AHE是在定量协议与测量的AHE在这些外延层。此外，预测的各向异性依赖的实验AHE上的磁化被很好地再现。
We present an experimental and theoretical study of the anomalous Hall effect (AHE) in MnAs epilayers grown over GaAs, with the aim to identify the intrinsic contribution to the AHE, which can be accurately evaluated using ab initio electronic structure calculations. Our magnetotransport measurements show a quadratic behavior of the Hall resistivity with longitudinal resistivity, characteristic of scattering-independent processes, thus enabling the comparison with our ab initio calculations. The calculated Berry phase contribution to the AHE is in quantitative agreement with the measured AHE in these epilayers. Moreover, the predicted anisotropic dependence of the experimental AHE on the magnetization is well reproduced.