Reactive diffusion between Pd and Sn at solid-state temperatures
Reactive diffusion between Pd and Sn at solid-state temperatures
复制标题
DOI：
10.1016/j.msea.2005.06.054
复制
发表时间：
2005-10
期刊：
影响因子：
6.4
通讯作者：
T. Takenaka;M. Kajihara;N. Kurokawa;K. Sakamoto
中科院分区：
文献类型：
--
作者：
T. Takenaka;M. Kajihara;N. Kurokawa;K. Sakamoto
采用扩散连接技术制备了Sn/Pd/Sn扩散偶，对固态温度下Pd和Sn之间的反应扩散动力学进行了实验研究。扩散偶在T=433、453和473 K的温度下，在含有硅油的油浴中等温退火300 h。退火后，在T= 433 K时观察到PdSn 4、PdSn 3和PdSn 2化合物层，而在T=453和473 K时仅观察到PdSn 4和PdSn 3化合物层。Pd-Sn化合物层的总厚度l在数学上描述为退火时间t的幂函数，如下：l=k（t/t0）n，其中t0是单位时间，1 s。化合物层中柱状晶的直径d也表示为退火时间t的幂函数：d=kd（t/t0）p，在T=433- 473 K，n接近0.5，p取0.14-0.17。这样的p值表明在化合物层中以一定的速率发生晶粒生长。然而，总厚度l几乎与退火时间t的平方根成比例。因此，可以得出结论，体积扩散是Pd和Sn之间的反应扩散的速率控制过程。
The kinetics of the reactive diffusion between Pd and Sn at solid-state temperatures was experimentally examined using Sn/Pd/Sn diffusion couples prepared by a diffusion bonding technique. The diffusion couples were isothermally annealed at temperatures of T=433, 453 and 473K for various times up to 300h in an oil bath with silicone oil. After annealing, PdSn4, PdSn3and PdSn2compound layers were observed at T=433K, but only PdSn4and PdSn3layers were recognized at T=453 and 473K. The total thickness l of the Pd–Sn compound layers is mathematically described as a power function of the annealing time t as follows: l=k(t/t0)n, where t0is unit time, 1s. The diameter d of the columnar grain in the compound layers is also expressed as a power function of the annealing time t: d=kd(t/t0)p. At T=433–473K, n is close to 0.5, and p takes values of 0.14–0.17. Such values of p indicate that the grain growth occurs at certain rates in the compound layers. Nevertheless, the total thickness l is almost proportional to the square root of the annealing time t. Thus, it is concluded that the volume diffusion is the rate-controlling process of the reactive diffusion between Pd and Sn.