Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)
Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)
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DOI：
10.1063/1.4939692
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发表时间：
2016-01-04
影响因子：
4
通讯作者：
Michaud, Jean-Francois
中科院分区：
文献类型：
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作者：
Khazaka, Rami;Grundmann, Marius;Michaud, Jean-Francois
采用化学气相沉积法在3C-SiC（001）/Si（001）轴向模板上异质外延Si（110）薄膜，对其结构和形态进行了表征。使用无反相畴（APD）的3C-SiC层，其显示出限于1 nm的粗糙度。这导致对于400 nm的膜厚度具有仅3 nm的粗糙度的平滑Si膜。在无APD的3C-SiC表面上，发现Si（110）外延层中的旋转畴数为2。这归因于两种相关材料之间的镜平面的平面内方位角未对准。我们证明，基本上没有进一步减少域的数量可以预期为给定的基板。我们建议有必要使用离轴基板，最终有利于一个单一的域的增长。(C)2016 AIP Publishing LLC.
Structural and morphological characterization of a Si(110) film heteroepitaxied on 3C-SiC(001)/Si(001) on-axis template by chemical vapor deposition has been performed. An antiphase domain (APD) free 3C-SiC layer was used showing a roughness limited to 1 nm. This leads to a smooth Si film with a roughness of only 3 nm for a film thickness of 400 nm. The number of rotation domains in the Si(110) epilayer was found to be two on this APD-free 3C-SiC surface. This is attributed to the in-plane azimuthal misalignment of the mirror planes between the two involved materials. We prove that fundamentally no further reduction of the number of domains can be expected for the given substrate. We suggest the necessity to use off-axis substrates to eventually favor a single domain growth. (C) 2016 AIP Publishing LLC.