High-Q design of semiconductor-based ultrasmall photonic crystal nanocavity
High-Q design of semiconductor-based ultrasmall photonic crystal nanocavity
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DOI：
10.1364/oe.18.008144
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发表时间：
2010-04-12
期刊：
影响因子：
3.8
通讯作者：
Arakawa, Yasuhiko
中科院分区：
文献类型：
--
作者：
Nomura, Masahiro;Tanabe, Katsuaki;Arakawa, Yasuhiko
我们报道了一种基于半导体的二维零胞光子晶体（PhC）纳米腔的高Q值设计，其模体积较小。除了在Γ - K方向外，对六边形晶格空气孔在Γ - M方向的位移进行优化，使得腔品质因数Q达到2.8×10⁵，同时保持了0.23(λ₀ / n)³的小模体积。对平面外辐射损耗的动量空间考虑表明，在平面内x和y两个方向对空气孔位移的优化分别降低了沿kₓ和kᵧ轴泄漏区域的傅里叶变换分量。这种高Q值腔设计适用于硅和砷化镓半导体材料。（c）2010美国光学学会
We report a high-Q design for a semiconductor-based two-dimensional zero-cell photonic crystal (PhC) nanocavity with a small mode volume. The optimization of displacements of hexagonal-lattice air holes in the Gamma-M direction, in addition to the Gamma-K direction, resulted in a cavity quality factor Q of 2.8 x 10(5) sustaining the small modal volume of 0.23(lambda(0)/n)(3). The momentum space consideration of out-of-plane radiation loss showed that the optimization of air hole displacements in both the in-plane x and y directions reduced FT components in the leaky region along the k(x) and k(y) axes, respectively. This high-Q cavity design is applicable to Si and GaAs semiconductor materials. (c) 2010 Optical Society of America