Reactive sputter-deposition of AlN films by dense plasma focus
Reactive sputter-deposition of AlN films by dense plasma focus
复制标题
密集等离子体聚焦反应溅射沉积 AlN 薄膜
DOI：
10.1116/1.2357743
复制
发表时间：
2006
期刊：
影响因子：
--
通讯作者：
A. Waheed
中科院分区：
文献类型：
--
作者：
M. Sadiq;Shoaib Ahmad;M. Shafiq;M. Zakaullah;R. Ahmad;A. Waheed
利用低能量(1.45kJ)的高密度等离子体聚焦装置，在硅衬底上室温沉积氮化铝薄膜。对于薄膜的沉积，用固体铝阳极代替传统的中空铜阳极，并使用氮气作为填充气体。通过将衬底放置在阳极的前面，使用多次聚焦来沉积薄膜。用X射线衍射仪、拉曼光谱、扫描电子显微镜和显微硬度测试对沉积的薄膜进行了表征。对薄膜的X射线衍射分析表明，沉积的薄膜具有很强的c轴取向。薄膜的拉曼光谱表明，薄膜处于压应力状态，随着聚焦次数的增加，薄膜的结晶质量下降。显微硬度结果表明，在硅衬底上均匀沉积了硬质AlN层。
A low energy (1.45kJ) dense plasma focus device is used to deposit thin films of aluminum nitride (AlN) at room temperature on silicon substrates. For deposition of films, a conventional hollow copper anode is replaced with a solid aluminum anode and nitrogen is used as fill gas. The films are deposited using a multiple number of focus shots by placing the substrate in front of the anode. The deposited films are characterized using x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy, and a microhardness test. The XRD analysis of the films shows that the deposited films show strong c-axis alignment. The Raman spectra of the films indicate that the deposited films are under compressive stress and crystalline quality decreases with increasing number of focus shots. The microhardness results point toward the uniform deposition of hard AlN layers on silicon substrates.