Short-channel effect immunity and current capability of sub-0.1-micron MOSFET's using a recessed channel
Short-channel effect immunity and current capability of sub-0.1-micron MOSFET's using a recessed channel
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DOI：
10.1109/16.506776
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发表时间：
1996-08-01
影响因子：
3.1
通讯作者：
Dubois, E
中科院分区：
文献类型：
--
作者：
Bricout, PH;Dubois, E
Sub-0.1-mu m planar and gate recessed MOSFET's are investigated using both drift-diffusion and Monte Carlo simulations. In nonplanar devices, the influence of the gate corner explains that the threshold voltage roll-off can be almost suppressed. A steeper subthreshold slope (low swing) is also obtained for a channel length shorter than 50 nm when the recessed channel MOSFET is compared to its planar counterpart. The influence of the corner effect on high-current performances is also considered in relation with the electric field profile along the Si/SiO2 interface.
