Manipulation of nanoscale V-pits to optimize internal quantum efficiency of InGaN multiple quantum wells
Manipulation of nanoscale V-pits to optimize internal quantum efficiency of InGaN multiple quantum wells
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DOI：
10.1063/1.4914116
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发表时间：
2015-03-02
影响因子：
4
通讯作者：
Lu, Tien-Chang
中科院分区：
文献类型：
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作者：
Chang, Chiao-Yun;Li, Heng;Lu, Tien-Chang
通过调整超晶格结构，系统研究了纳米V型凹坑对InGaN多量子威尔斯阱（MQW）内量子效率（IQE）的影响.分析表明，侧壁多量子阱对V形坑的高势垒能和穿透位错（TD）中心与V形坑边界之间的长扩散距离是有效钝化TD非辐射中心的关键。对于较大的V形坑，V形坑上较厚的侧壁MQW会降低势垒能量。相反，在较小的V-凹坑中，TD中心与V-凹坑边界之间的距离将被观察到较短，这可以增加TD的载流子捕获能力。在我们的实验中，对于具有15对SLS的多量子阱，可以得出大约200-250 nm的优化的V-坑尺寸，其表现出70%的IQE值。(C)2015 AIP Publishing LLC.
We systematically investigated the influence of nanoscale V-pits on the internal quantum efficiency (IQE) of InGaN multiple quantum wells (MQWs) by adjusting the underlying superlattices (SLS). The analysis indicated that high barrier energy of sidewall MQWs on V-pits and long diffusion distance between the threading dislocation (TD) center and V-pit boundary were crucial to effectively passivate the non-radiative centers of TDs. For a larger V-pit, the thicker sidewall MQW on V-pit would decrease the barrier energy. On the contrary, a shorter distance between the TD center and V-pit boundary would be observed in a smaller V-pit, which could increase the carrier capturing capability of TDs. An optimized V-pit size of approximately 200-250 nm in our experiment could be concluded for MQWs with 15 pairs SLS, which exhibited an IQE value of 70%. (C) 2015 AIP Publishing LLC.