Chemical substitution induced half-metallicity in CrMnSb(1−x)Px
Chemical substitution induced half-metallicity in CrMnSb(1−x)Px
复制标题
CrMnSb(1−x)Px 中的化学取代诱导半金属性
DOI:
10.1063/5.0021467
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发表时间:
2020
影响因子:
3.2
通讯作者:
P. Lukashev
中科院分区:
文献类型:
--
作者:
Evan O'Leary;Adam Ramker;Devon VanBrogen;Bishnu R. Dahal;E. Montgomery;S. Poddar;P. Kharel;A. Stollenwerk;P. Lukashev
Half-metallic Heusler alloys have been intensively studied in recent years due to their potential applications in spin-based devices, e.g., in magnetic tunnel junctions. Yet, their properties may be very sensitive to the choice of the substrates, i.e., to the epitaxial strain and interface properties. Here, we report the results of our computational work on the half-Heusler compound CrMnSb(1−x)Px. In particular, we demonstrate that the parent compound CrMnSb is close to a half-metallic material at the optimized lattice parameter, with the onset of the half-metallic bandgap a few meV above the Fermi energy. Moreover, although it undergoes a half-metallic transition under a uniform compression of ∼1.5%, such a transition is absent under epitaxial strain. At the same time, we show that a half-metallic transition could be induced by a chemical substitution of Sb with P, which results in a volume reduction of the unit cell. In particular, 50% substitution of Sb with P leads to a robust half-metallicity in CrMnSb(1−x)Px, with 100% spin polarization being retained at a large range of epitaxial strain. Thus, our results indicate that CrMnSb0.5P0.5 could be grown on different types of substrates, e.g., GaAs, without its electronic properties being detrimentally affected by biaxial strain. In addition, CrMnSb0.5P0.5 exhibits a fully compensated ferrimagnetic alignment, which could be potentially useful in applications where stray magnetic fields are undesirable.
影响因子:
4
作者:
Balke, Benjamin;Fecher, Gerhard H.;Felser, Claudia
通讯作者:
Felser, Claudia
影响因子:
4
作者:
M. Jourdan;E. Arbelo Jorge;C. Herbort;M. Kallmayer;P. Klaer;H.-J. Elmers
通讯作者:
H.-J. Elmers