Measurement of Dielectric Properties for Low-Loss Materials at Millimeter Wavelengths

Measurement of Dielectric Properties for Low-Loss Materials at Millimeter Wavelengths
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DOI:
10.1007/s10762-011-9795-4
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发表时间:
2011-05
期刊:
Journal of Infrared, Millimeter, and Terahertz Waves
影响因子:
--
通讯作者:
C. R. Jones;J. Dutta;Guofen Yu;Yuanci Gao
C. R. Jones;J. Dutta;Guofen Yu;Yuanci Gao
中科院分区:
其他
文献类型:
--
作者:
C. R. Jones;J. Dutta;Guofen Yu;Yuanci Gao

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我们在此描述了一种在130至170 GHz频率范围内精确测量极低损耗材料介电特性的系统。该系统采用质量因子为1 × 106的开放式谐振器。该谐振器的谐振曲线是用配有外部毫米波谐波混频器的商用频谱分析仪获得的。激发源是一个后向波振荡器,通过数字锁相环锁定在频谱分析仪的本振上。该系统允许快速和准确的测量共振曲线线宽,允许确定损耗切线到10-6范围。结果报告了碳化硅(SiC), CVD金刚石,蓝宝石和石英。
We describe here a system for accurate measurement of the dielectric properties of very low-loss materials in the 130 to 170 GHz frequency range. This system utilizes an open resonator with a quality factor ∼ 1 × 106. Resonance curves for this resonator are acquired with a commercial spectrum analyzer equipped with an external millimeter-wave harmonic mixer. The excitation source is a backward-wave oscillator locked to the spectrum analyzer local oscillator via a digital phase-locked loop. This system permits rapid and accurate measurement of resonance curve line widths, permitting determination of loss tangents down to the 10-6range. Results are reported for silicon carbide (SiC), CVD diamond, sapphire, and quartz.