Nucleation and subsequent growth of clusters in reactive plasmas
Nucleation and subsequent growth of clusters in reactive plasmas
复制标题
反应等离子体中团簇的成核和随后的生长
DOI：
10.1088/0963-0252/11/3a/334
复制
发表时间：
2002
影响因子：
3.8
通讯作者：
K. Koga
中科院分区：
文献类型：
--
作者：
Yukio Watanabe;M. Shiratani;K. Koga
团簇的成核和随后的生长过程，即？在电容耦合高频SiH 4放电中研究了尺寸小于几nm的颗粒。团簇的尺寸和密度随时间的演化清楚地表明在Si_4H_x附近存在尺寸分布的瓶颈。成核后，大尺寸团簇SinHx（n>4）的生长主要是由于小尺寸团簇SinHx（2？你好吗？4)和其它分子种类SiHx（0？x？3）。这些结果导致了集团的增长模型，它可以合理地解释到目前为止所获得的结果。此外，研究了气体流量、放电调制、气体温度梯度和氢气稀释对团簇生长和行为的影响，以控制团簇的生长。该反应器利用热泳力、气流和抽真空两种方式抑制团簇的生长，无停滞现象，是制备高质量a-Si：H薄膜的新方法。使用该反应器沉积的膜的质量比常规的高质量膜的质量好得多。
Nucleation and subsequent growth processes of clusters, i.e.?particles below a few nm in size, have been studied in capacitively coupled high-frequency SiH4 discharges. Time evolution of size and density of clusters has clearly shown the existence of bottleneck in the size distribution at around Si4Hx's. After the nucleation, the clusters of the large size group, SinHx's (n>4), grow mainly due to influxes of those of the small size group, SinHx's (2?n?4) and other molecular species SiHx's (0?x?3). These results have led to the growth model of clusters, which can reasonably explain the results obtained until now. Furthermore, effects of gas flow, discharge modulation, gas temperature gradient and hydrogen dilution on growth and behaviour of clusters have been studied to control their growth. The reactor, which suppresses the growth of clusters both by thermophoretic force and by gas flow and evacuation without stagnation, has been newly developed to make a-Si:H films of high qualities. The qualities of films deposited using the reactor are much better than those of conventional high-quality films.