Properties of GaP(001) surfaces chemically treated in NH4OH solution
Properties of GaP(001) surfaces chemically treated in NH4OH solution
复制标题
NH4OH溶液中化学处理的GaP(001)表面的性能
DOI：
10.1063/1.2337386
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发表时间：
2006
影响因子：
3.2
通讯作者：
S. Adachi
中科院分区：
文献类型：
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作者：
H. Morota;S. Adachi
用椭圆偏振光谱(SE)、原子力显微镜(AFM)、X射线光电子能谱(XPS)和润湿性测量技术研究了GaP(001)表面在25%NH4OH溶液中的化学清洗。SE数据清楚地表明，该溶液在浸泡样品后立即导致自然氧化膜的去除。SE数据还表明，当自然氧化膜被完全蚀刻去除时，所产生的表面仍然粗糙。估算的粗糙度厚度为∼1.2 nm，与AFM均方根值(∼1.2 nm)非常一致。XPS谱证实了GaP表面天然氧化物的去除。X射线光电子能谱数据还表明，经过刻蚀清洁的间隙表面有一层厚度为0.3 nm的薄∼氧化层。润湿性测试表明，脱脂后的表面是疏水的，而氨水清洗后的表面是亲水的。这一结果与酸清洗表面得到的结果形成了直接对比，酸清洗表面通常是疏水的。它的起源是……
Chemically cleaned GaP(001) surfaces in 25% NH4OH solution have been studied using spectroscopic ellipsometry (SE), ex situ atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), and wettability measurement techniques. The SE data clearly indicate that the solution causes removal of the native oxide film immediately upon immersing the sample. The SE data also indicate that when the native oxide film is completely etch removed, the resulting surface is still roughened. The estimated roughness thickness is ∼1.2nm, in excellent agreement with the AFM rms value (∼1.2nm). The XPS spectra confirm the removal of the native oxide from the GaP surface. The XPS data also suggest a thin oxide overlayer, ∼0.3nm thick, on the etch-cleaned GaP surface. The wettability measurements indicate that the as-degreased surface is hydrophobic, while the NH4OH-cleaned surface is hydrophilic. This result is in direct contrast to those obtained from acid cleaned surfaces, which are usually hydrophobic. The origin o...