Fully Optical in Operando Investigation of Ambient Condition Electrical Switching in MoS2 Nanodevices.
Fully Optical in Operando Investigation of Ambient Condition Electrical Switching in MoS2 Nanodevices.
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MoS2 纳米器件中环境条件电气开关的全光学操作研究。
DOI：
10.1002/adma.202209968
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发表时间：
2023
期刊：
影响因子：
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通讯作者：
Symonowicz J
中科院分区：
文献类型：
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作者：
Symonowicz J
mos2纳米开关显示出极好的超低开关能量，且没有过大的漏电流。然而，由于缺乏足够的纳米成像器件，关于电开关的起源和挥发性的争论尚未解决。在这里，三种光学技术相结合，执行纳米二硫化钼器件的首次非侵入性原位表征。这项研究揭示了挥发性阈值电阻开关是由于金属原子从电极直接插入Mo和S原子之间，而没有硫空位的帮助。观察到由邻近二硫化钼的有机层驱动的“半忆阻”效应，这表明可以通过精心的界面工程来实现非挥发性。这些发现提供了对垂直偏置mos2纳米片纳米工艺的重要理解，为二维电子学的有意识工程和优化开辟了新的途径。
MoS2nanoswitches have shown superb ultralow switching energies without excessive leakage currents. However, the debate about the origin and volatility of electrical switching is unresolved due to the lack of adequate nanoimaging of devices in operando. Here, three optical techniques are combined to perform the first noninvasive in situ characterization of nanosized MoS2devices. This study reveals volatile threshold resistive switching due to the intercalation of metallic atoms from electrodes directly between Mo and S atoms, without the assistance of sulfur vacancies. A “semi‐memristive” effect driven by an organic adlayer adjacent to MoS2is observed, which suggests that nonvolatility can be achieved by careful interface engineering. These findings provide a crucial understanding of nanoprocess in vertically biased MoS2nanosheets, which opens new routes to conscious engineering and optimization of 2D electronics.