The Importance of Slag Structure to Boron Removal from Silicon during the Refining Process: Insights from Raman and Nuclear Magnetic Resonance Spectroscopy Study
The Importance of Slag Structure to Boron Removal from Silicon during the Refining Process: Insights from Raman and Nuclear Magnetic Resonance Spectroscopy Study
复制标题
精炼过程中炉渣结构对硅除硼的重要性：拉曼和核磁共振光谱研究的见解
DOI：
10.1007/s11663-017-1097-3
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发表时间：
2017-12-01
影响因子：
3
通讯作者：
Sun, Liyuan
中科院分区：
文献类型：
--
作者：
Qian, Guoyu;Wang, Zhi;Sun, Liyuan
炉渣结构在决定从硅中除硼的相对容易程度方面起着重要作用。采用不同光学碱度（0.6 至 0.71）的 CaO-SiO2-Na2O 炉渣，通过拉曼光谱和核磁共振 (NMR) 光谱实验研究了炉渣结构与除硼热力学之间的相关性。炉渣解聚的优化可以有效去除硼。随着光学碱度从0.6增加到0.66，非桥氧含量(NBO/T)和硼去除程度逐渐增加：硼氧化产生的B2O3捕获Q(0)(Si)、Q(1)(Si)和Q(2)(Si)的非桥氧，并以Q(3)(Si和B)的形式掺入硅酸盐网络中。当光学碱度增加到0.71时，NBO/T迅速增加，硼去除率显着下降。 Q(3)(Si和B)的快速解聚降低了硼的稳定性。成功检测到硅酸盐网络中硼的各种结构形式：BO3三面体B-[3]-3Si、B-[3]-2Si-1NBO和BO3（非环），以及BO4四面体BO4（1B，3Si）和BO4（0B，4Si）。 BO4（1B、3Si）是有助于硼容量增加的主要结构；在较高光学碱度条件下检测到的 BO3（非环）可能会通过抑制其氧化而导致除硼效果恶化。
Slag structure plays an important role in determining the relative ease of boron removal from silicon. Correlation between slag structure and boron removal thermodynamics was experimentally studied by Raman and nuclear magnetic resonance (NMR) spectroscopy using CaO-SiO2-Na2O slags with different optical basicities (0.6 to 0.71). Optimization of slag depolymerization leads to efficient removal of boron. The extent of nonbridged oxygen content (NBO/T) and boron removal gradually increased with an increase in optical basicity from 0.6 to 0.66: B2O3 derived from boron oxidation captured nonbridging oxygens of Q (0)(Si), Q (1)(Si), and Q (2)(Si), and was incorporated into the silicate network in the form of Q (3)(Si and B). When optical basicity increased to 0.71, NBO/T rapidly increased and boron removal decreased considerably. Quick depolymerization of Q (3)(Si and B) deteriorated the stability of boron. Various structural forms of boron in the silicate network were successfully detected: the BO3 trihedrons B-[3]-3Si, B-[3]-2Si-1NBO, and BO3 (nonring), and the BO4 tetrahedrons BO4 (1B, 3Si) and BO4 (0B, 4Si). BO4 (1B, 3Si) was the main structure contributing to the increase of boron capacity; BO3 (nonring), detected under higher optical basicity conditions, may cause deterioration of boron removal by suppressing its oxidation.