Preparation and properties of thermally conductive polyimide/boron nitride composites
Preparation and properties of thermally conductive polyimide/boron nitride composites
复制标题
DOI：
10.1039/c6ra01084a
复制
发表时间：
2016-02
期刊：
影响因子：
3.9
通讯作者：
Na Yang;Chen Xu;Jun Hou;Yanmei Yao;Qingxin Zhang;Maryam E. Grami;Lianqi He;Nongyue Wang;
中科院分区：
文献类型：
--
作者：
Na Yang;Chen Xu;Jun Hou;Yanmei Yao;Qingxin Zhang;Maryam E. Grami;Lianqi He;Nongyue Wang;
聚酰亚胺（PI）由于其低介电性、优异的绝缘性和优异的热稳定性而被广泛用作优选的封装基质材料。采用硅烷偶联剂3-缩水甘油氧基丙基三甲氧基硅烷（γ-MPS）对六方氮化硼（h-BN）微粒进行功能化处理，以改善其与聚酰亚胺（PI）基体的界面作用。以改性后的h-BN（m-BN）粒子为原料，采用原位聚合法制备了PI/m-BN复合材料。傅里叶变换红外光谱（FTIR）、热重分析（TGA）、透射电镜（TEM）和接触角测试证明γ-MPS偶联剂分子已经化学接枝到h-BN表面。此外，还研究了m-BN含量对PI/m-BN复合材料导热性能的影响。用40wt% m-BN颗粒负载量获得的复合材料呈现出0.748W m-1 K-1的热导率，比纯PI高4.6倍。同时，所制备的PI/m-BN复合材料具有良好的电绝缘性和热稳定性。随着m-BN含量的增加，PI/m-BN复合材料的玻璃化转变温度略有降低，储能模量有所提高。这些结果表明，PI/m-BN复合材料可能会在微电子工业中提供新的应用，因为未来的基板材料需要有效的散热。
Polyimide (PI) has been widely used as a preferred packaging matrix material due to its low dielectricity, outstanding insulation and excellent thermal stability. Hexagonal boron nitride (h-BN) microparticles were functionalized with a silane coupling agent, 3-glycidyloxypropyltrimethoxy silane (γ-MPS), to improve the interface action with the PI matrix. The modified h-BN (m-BN) particles were used to fabricate the PI/m-BN composites with enhanced thermal conductivity by in situ polymerization. The Fourier transform infrared (FTIR) spectra, thermo-gravimetric analysis (TGA), transmission electron microscopy (TEM) and contact angle test proved that γ-MPS coupling agent molecules had been chemically grafted onto the h-BN surface. In addition, the effects of the m-BN content on the thermal conductivity of PI/m-BN composites were investigated. The composite obtained with 40 wt% m-BN particle loading presented a thermal conductivity of 0.748 W m−1 K−1, 4.6 times higher than that of pure PI. Meanwhile, the fabricated PI/m-BN composites retained excellent electrical insulation and thermal stability. The glass transition temperature values of the PI/m-BN composites decreased slightly while the storage modulus improved with the increase of the m-BN content. These results showed that PI/m-BN composites may offer new applications in the microelectronic industry because future substrate materials require effective heat dissipation.