Solution-processed organic?inorganic hybrid CMOS inverter exhibiting a high gain reaching 890
Solution-processed organic?inorganic hybrid CMOS inverter exhibiting a high gain reaching 890
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溶液处理的有机无机混合 CMOS 逆变器表现出高达 890 的高增益
DOI：
10.1016/j.orgel.2017.05.050
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发表时间：
2017
影响因子：
3.2
通讯作者：
Takeya Jun
中科院分区：
文献类型：
--
作者：
Kumagai Shohei;Murakami Hiroko;Tsuzuku Kotaro;Makita Tatsuyuki;Mitsui Chikahiko;Okamoto Toshihiro;Watanabe Shun;Takeya Jun
在这封信中，我们提出了一个有机-无机混合CMOS反相器采用高性能的p型有机半导体和非晶金属氧化物层的制造方案和器件性能。通常在溶液处理的半导体氧化物中发现的在器件处理期间氧化物层的劣化可以通过利用聚合物共混物的一次溶液结晶技术来避免。p型和n型沟道均表现出优异的晶体管性能，具有高载流子迁移率和在0 V栅极电压附近的陡峭导通行为，从而成功演示了具有890增益的理想CMOS反相器操作。这一结果将更新有机-无机混合CMOS电路在实际器件中的潜在优势。
In this letter, we present a fabrication scheme and device performances of an organic–inorganic hybrid CMOS inverter employing a high-performance p-type organic semiconductor and an amorphous metal oxide layers. A deterioration of the oxide layer during device processing, which is often found in solution-processed semiconductor oxides, can be avoided by a one-shot solution-crystallization technique utilizing a polymer-blend. Both the p- and the n-type channels exhibited excellent transistor performances with high carrier mobilities and with precipitous turn-on behaviors near the gate voltages of 0 V, resulting in a successful demonstration of an ideal CMOS inverter operation with gain of 890. This result will update a potential excellence of organic–inorganic hybrid CMOS circuits in practical devices.