On the thermal expansion coefficient of CoSi2 and NiSi2

On the thermal expansion coefficient of CoSi2 and NiSi2
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关于CoSi2和NiSi2的热膨胀系数

DOI:
10.1088/0022-3727/42/23/235402
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发表时间:
2009
期刊:
Journal of Physics D: Applied Physics
影响因子:
--
通讯作者:
A. Vantomme
A. Vantomme
中科院分区:
--
文献类型:
--
作者:
D. Smeets;G. Vanhoyland;J. D’Haen;A. Vantomme

文献摘要

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我们用高温X射线衍射法在300-850 K温度范围内准确地测定了CoSi2和NiSi2的热膨胀系数,解决了文献中报道的值的模糊性。CoSi2和NiSi2的室温(298 K)线膨胀系数(α=(1/a0)(∂a/∂T))分别为和。然而,我们的结果强烈地表明,NiSi2的热膨胀系数与温度有关,当需要精确的NiSi2热膨胀系数时,我们推荐使用(T−273 K)]×10−6 K−1。
We have accurately determined the thermal expansion coefficients of CoSi2 and NiSi2 using high-temperature x-ray diffraction in the temperature range 300–850 K, resolving the ambiguity in the values reported in the literature. The room temperature (298 K) linear thermal expansion coefficients (α = (1/a0)(∂a/∂T)) for CoSi2 and NiSi2 are found to be and , respectively. Our results, however, strongly suggest that the thermal expansion coefficient of NiSi2 is temperature dependent and we recommend to use (T − 273 K)] × 10−6 K−1 whenever an accurate value of the NiSi2 thermal expansion coefficient is needed.