Scalable Synthesis of Graphene on Patterned Ni and Transfer
Scalable Synthesis of Graphene on Patterned Ni and Transfer
复制标题
图案化镍上石墨烯的可扩展合成和转移
DOI：
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复制
发表时间：
2010
影响因子：
3.1
通讯作者：
J. Woo
中科院分区：
文献类型：
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作者：
Yanjie Wang;Congqin Miao;Bo;Jing Zhu;Wei Liu;Youngju Park;Yahong Xie;J. Woo
我们提出了一种在绝缘体衬底上批量生产高质量石墨烯的方法。通过退火得到了单一或少量晶粒的Ni点。电子背散射衍射表明，几乎所有的镍点的（111）表面是平行于基板。在Ni点上生长出了具有良好结晶质量的单层石墨烯。通过晶片键合和回蚀技术将图案化的石墨烯膜转移到绝缘衬底上，这导致零错位、低污染和高产率（>90%）。用该方法制备了具有自对准栅极的石墨烯基场效应晶体管，这表明该方法作为石墨烯晶体管的大规模生产的候选者的潜力。
We present an approach to mass produce high-quality graphene on insulator substrate. Ni dots with single or few grains were achieved by annealing. Electron backscattered diffraction indicated that almost all of the Ni dots had (111) surface that is parallel to the substrate. Single-layer graphene with good crystalline quality has been grown on Ni dots. The patterned graphene films were transferred to insulating substrates by wafer bonding and etch back technique, which resulted in zero misalignment, low contamination, and high yield (>90%). Graphene-based field-effect transistors with self-aligned gate were fabricated with this method, which demonstrate the potential of this method as a candidate for mass production of graphene transistors.