GaN HEMT PA with over 84% power added efficiency
GaN HEMT PA with over 84% power added efficiency
复制标题
GaN%20HEMT%20PA%20with%20over%2084%%20power%20add%20效率
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
Z. Popovic
中科院分区：
文献类型：
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作者：
M. Roberg;J. Hoversten;Z. Popovic
介绍了一种用于W-CDMA下行链路频段的功率放大器的设计过程和实测性能，该功率放大器在2.14%GHz处的PAE超过84%。PA采用未表征的GaN HEMT设计。基于测量的设计方法用于优化基频下的电源和负载阻抗，并强制使用-1\f25 F-1类谐波终端。从全波EM模型中提取的S参数表征了从GaN HEMT的虚拟漏极到输出匹配电路的阻抗变换，用于设计F-1类二次和三次谐波终端。最终PA的最高效率出现在偏离设计频率10 MHz处，在2.15 GHz时表现出84.9 PAE、8.2 W输出功率和18.4 dB增益。
Described are the design procedure and measured performance of a PA targeted for the W-CDMA downlink band exhibiting over 84% PAE at 2.14%GHz. The PA is designed with an uncharacterised GaN HEMT. A measurement-based design approach is used to optimise the source and load impedance at the fundamental frequency with class-F -1 harmonic terminations enforced. S -parameters extracted from a full-wave EM model characterising the impedance transformation from the virtual drain of the GaN HEMT to an output matching circuit are used to design class-F -1 second- and third-harmonic terminations. The highest efficiency for the final PA occurred 10 MHz off the design frequency, exhibiting 84.9 PAE, 8.2 W output power and 18.4 dB of gain at 2.15 GHz.