VUV-Assisted Etching of Silicon (100) and Poly(methyl methacrylate)
VUV-Assisted Etching of Silicon (100) and Poly(methyl methacrylate)
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硅 (100) 和聚（甲基丙烯酸甲酯）的 VUV 辅助蚀刻
DOI：
10.1143/jjap.27.1723
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发表时间：
1988
期刊：
影响因子：
--
通讯作者：
Ken'ichiro Tanaka
中科院分区：
文献类型：
--
作者：
N. Ueno;T. Mitsuhata;K. Sugita;Ken'ichiro Tanaka
研究了在2.45GHz的CF_4/O_2（5%）气体放电产生的反应物种存在下，利用真空紫外（VUV）光对硅和聚甲基丙烯酸甲酯（PMMA）进行光刻的可能性。真空紫外光是通过毛细管型放电灯的氢气放电获得的。对于这两种材料，由反应物种的化学干法蚀刻明显增强真空紫外线照射到材料的表面。结果表明，真空紫外诱导刻蚀是表面光化学反应的结果，这是有益的，在产生各向异性光刻。
The possibility of photoetching of silicon and poly(methyl methacrylate) (PMMA) has been studied using vacuum ultraviolet (VUV) light under the existence of reactive species produced by 2.45 GHz discharge of CF4/O2(5%) gas. The VUV light was obtained by hydrogen gas discharge with a capillary-type discharge lamp. For both materials, the chemical dry etching by the reactive species was clearly enhanced by VUV irradiation to the surface of the materials. The results suggest that the VUV-induced etching is the result of a surface photochemical reaction which is useful in producing anisotropic photoetching.