Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer*
Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer*
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DOI：
10.1088/1674-1056/24/11/116803
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发表时间：
2015-10
影响因子：
1.7
通讯作者：
L. Xiaojing;Degang Zhao;D. Jiang;Ping Chen;Jian-jun Zhu;Zongshun Liu;L. Le;Jing Yang;Xiaoguang He
中科院分区：
文献类型：
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作者：
L. Xiaojing;Degang Zhao;D. Jiang;Ping Chen;Jian-jun Zhu;Zongshun Liu;L. Le;Jing Yang;Xiaoguang He
薄的重Mg掺杂InGaN和GaN化合物接触层用于形成Ni/Au欧姆接触到p-GaN。研究了复合接触层的生长条件及其对Ni/Au欧姆接触性能的影响。通过优化复合接触层的生长条件，可以使接触电阻率降低近两个数量级。当p++-InGaN层的Mg和Ga气体源之间的流量比为10.6%并且p++-InGaN层的厚度为3 nm时，实现了3.98 × 10 - 5 Ω cm 2的最低接触电阻率。此外，实验结果表明，通过优化合金化退火温度至520 °C，可以进一步降低接触电阻率至1.07 × 10−7 Ω cm 2。
Thin heavily Mg-doped InGaN and GaN compound contact layer is used to form Ni/Au Ohmic contact to p-GaN. The growth conditions of the compound contact layer and its effect on the performance of Ni/Au Ohmic contact to p-GaN are investigated. It is confirmed that the specific contact resistivity can be lowered nearly two orders by optimizing the growth conditions of compound contact layer. When the flow rate ratio between Mg and Ga gas sources of p++-InGaN layer is 10.6% and the thickness of p++-InGaN layer is 3 nm, the lowest specific contact resistivity of 3.98 × 10−5 Ωcm2 is achieved. In addition, the experimental results indicate that the specific contact resistivity can be further lowered to 1.07 × 10−7 Ωcm2 by optimizing the alloying annealing temperature to 520 °C.