Chemical selectivity in photon-stimulated desorption of fluorine from silicon.
Chemical selectivity in photon-stimulated desorption of fluorine from silicon.
复制标题
光子刺激氟从硅中解吸的化学选择性。
DOI：
10.1103/physrevlett.60.960
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发表时间：
1988
影响因子：
8.6
通讯作者：
Avouris
中科院分区：
文献类型：
--
作者：
Yarmoff;Taleb;McFeely;Avouris
利用Si2p核能级区域的光子能量，研究了F/sup+/从Si(111)面上的光子激发脱附。制备了具有不同数量的SiF/subx/基团的氟化表面，并观察到SiF和SiF/sub3/表面基团对Si2p区F/sup+/脱附的明显的光子刺激脱附阈值。此外，出射F/sup+/的角分布相对于Si(111)表面法线的变化依赖于成键构型，这被用来获得单个SiF/subx/基团的局域2p吸收光谱。
Photon-stimulated desorption of F/sup +/ from Si(111) was studied with use of photon energies in the region of the Si 2p core level. Fluorinated surfaces with variable amounts of SiF/sub x/ groups were prepared, and distinct photon-stimulated--desorption thresholds in the Si 2p region were observed for F/sup +/ desorption from SiF vs SiF/sub 3/ surface groups. In addition, the angular distributions of the ejected F/sup +/ showed variations with respect to the Si(111) surface normal dependent on the bonding configuration, which were used to obtain local 2p absorption spectra for the individual SiF/sub x/ groups.