3D - A proposed new architecture for solid-state radiation detectors
3D - A proposed new architecture for solid-state radiation detectors
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DOI：
10.1016/s0168-9002(97)00694-3
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发表时间：
1997-08-21
影响因子：
1.4
通讯作者：
Segal, J
中科院分区：
文献类型：
--
作者：
Parker, SI;Kenney, CJ;Segal, J
提出了一种固体辐射探测器的新结构，使用三维电极阵列穿透探测器本体。列出了建议的制造步骤。收集距离和计算收集次数比电极局限于探测器表面的平面技术的条带和像素探测器少一个数量级，耗尽电压约低两个数量级。最大衬底厚度通常是x射线和伽马射线检测的重要考虑因素，它受电极长度的限制，而不是受材料纯度或电压击穿引起的耗尽深度限制。对于用这种技术制造的砷化镓探测器来说，最大漂移距离不再是一个重要的限制，并且收集时间可以远远小于一纳秒。硅探测器在高强度对撞机预期的严重体辐射损伤下工作的能力也应大大提高。
A proposed new architecture for solid-state radiation detectors using a three-dimensional array of electrodes that penetrate into the detector bulk is described. Proposed fabrication steps are listed. Collection distances and calculated collection times are about one order of magnitude less than those of planar technology strip and pixel detectors with electrodes confined to the detector surface, and depletion voltages are about two orders of magnitude lower. Maximum substrate thickness, often an important consideration for X-ray and gamma-ray detection, is constrained by the electrode length rather than by material purity or depletion-depth limitations due to voltage breakdown. Maximum drift distance should no longer be a significant limitation for GaAs detectors fabricated with this technology, and collection times could be much less than one nanosecond. The ability of silicon detectors to operate in the presence of the severe bulk radiation damage expected at high-intensity colliders should also be greatly increased.