WPPM: Advances in the Modeling of Dislocation Line Broadening

WPPM: Advances in the Modeling of Dislocation Line Broadening
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WPPM:位错线展宽建模的进展

DOI:
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发表时间:
2010
期刊:
影响因子:
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通讯作者:
P. Scardi
P. Scardi
中科院分区:
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文献类型:
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作者:
M. Leoni;J. Martinez;P. Scardi

文献摘要

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全粉末图形建模(WPPM)对于研究粉末和多晶材料中的线缺陷特别有用。由于在这一领域的最新进展,位错研究可以进行任何滑移系和晶体对称性的研究相。通过一些有代表性的研究案例,介绍了基本理论和程序。在PM2K软件实现WPPM方法的位错相关的加宽的使用与实际的例子。
Whole Powder Pattern Modeling (WPPM) is especially useful to study line defects in powder and polycrystalline materials. As a result of recent progresses in this field, dislocation studies can be carried out for any slip system and crystal symmetry of the studied phases. Basic theory and procedures are described with the help of some representative cases of study. The use of the dislocation-related broadening in the PM2K software implementing the WPPM approach is shown with practical examples.