Effect of electrode and oxide properties on the filament kinetics during electroforming in metal-oxide-based memories
Effect of electrode and oxide properties on the filament kinetics during electroforming in metal-oxide-based memories
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DOI：
10.1038/s41524-022-00770-2
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发表时间：
2022-04
影响因子：
9.7
通讯作者：
K. Zhang;Yao Ren;P. Ganesh;Ye Cao
中科院分区：
文献类型：
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作者：
K. Zhang;Yao Ren;P. Ganesh;Ye Cao
我们开发了一个物理模型来从根本上理解金属氧化物阻性随机存取存储器(RRAM)在电铸过程中开关层中导电丝(CF)的形成和生长行为。系统地研究了电极和氧化层的性质对碳纤维的形貌演变、伏安特性、局部温度和电位分布的影响。研究发现，选择氧空位形成能较低的活性电极和较小洛伦兹数(热导比)的氧化物，可以在较小的电铸电压下形成碳纤维，并得到形貌更均匀的碳纤维。这项工作加深了我们对电铸过程中碳纤维形成和生长动力学行为的理解，并有可能指导氧化物和电极材料的选择，以实现更稳定和功能更强的RRAM。
We developed a physical model to fundamentally understand the conductive filament (CF) formation and growth behavior in the switching layer during electroforming process in the metal-oxide-based resistive random-access memories (RRAM). The effects of the electrode and oxide layer properties on the CF morphology evolution, current-voltage characteristic, local temperature, and electrical potential distribution have been systematically explored. It is found that choosing active electrodes with lower oxygen vacancy formation energy and oxides with small Lorenz number (ratio of thermal and electrical conductivity) enables CF formation at a smaller electroforming voltage and creates a CF with more homogeneous morphology. This work advances our understanding of the kinetic behaviors of the CF formation and growth during the electroforming process and could potentially guide the oxide and electrode materials selection to realize a more stable and functional RRAM.