Enhanced photogeneration of carriers in a semiconductor via coupling across a nonisothermal nanoscale vacuum gap
Enhanced photogeneration of carriers in a semiconductor via coupling across a nonisothermal nanoscale vacuum gap
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DOI：
10.1063/1.1400762
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发表时间：
2001-09-17
影响因子：
4
通讯作者：
Fonstad, CG
中科院分区：
文献类型：
--
作者：
DiMatteo, RS;Greiff, P;Fonstad, CG
当热光伏电池被放置在亚微米接近加热表面的载体的增强生成证明使用定制设计的InAs光电二极管和特殊的硅基加热器芯片使用微机电系统技术生产。示出的短路电流的光电池急剧增加（高达五倍）时，加热器和光电二极管表面之间的间距减小，而在同一时间，加热器的温度降低，与增加的两个表面之间的辐射传递一致。通过正弦变化的间距（在高达1 kHz），它表明，在短路电流的增加发生在分离的减少，从而排除热效应的相位。有人认为，短路电流的增加是由于增加的倏逝波耦合的黑体辐射从热表面的冷光电池，与最近的理论预测一致。这种效应的演示是开发一类能量转换装置的第一步。(C)2001年美国物理学会。
Enhanced generation of carriers when a thermophotovoltaic cell is placed in submicron proximity to a heated surface is demonstrated using custom-designed InAs photodiodes and special silicon-based heater chips produced using microelectromechanical system techniques. The short-circuit current of the photocells is shown to increase sharply (up to fivefold) when the spacing between the heater and photodiode surfaces is reduced, while at the same time, the heater temperature decreases, consistent with increased radiative transfer between the two surfaces. By varying the spacing sinusoidally (at up to 1 kHz), it is demonstrated that the increase in the short-circuit current occurs in phase with the decrease in separation, thereby ruling out thermal effects. It is argued that the increase in short-circuit current is due to increased evanescent coupling of blackbody radiation from the hot surface to the cold photocell, consistent with recent theoretical predictions. The demonstration of this effect is the initial step in the development of a class of energy conversion devices. (C) 2001 American Institute of Physics.