The Study on SiO2 Pattern Fabrication Using Ge1.5Sn0.5Sb2Te5 as Resists
The Study on SiO2 Pattern Fabrication Using Ge1.5Sn0.5Sb2Te5 as Resists
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以Ge1.5Sn0.5Sb2Te5为光刻胶制作SiO2图案的研究
DOI：
10.1166/jnn.2013.5969
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发表时间：
2013-02-01
影响因子：
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通讯作者：
Zhang, Gengmin
中科院分区：
文献类型：
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作者：
Xi, Hongzhu;Liu, Qian;Zhang, Gengmin
Ge1.5Sn0.5Sb2Te5（GSST）可通过激光直写（LDW）系统轻易地从非晶态诱导转变为晶态。结果表明，GSST的晶相比非晶相更耐酸溶液腐蚀。因此，利用激光诱导相变和湿法蚀刻可在GSST薄膜抗蚀剂上形成纳米级图案和结构。此外，采用反应离子蚀刻（RIE）技术将这些图案转移到SiO2衬底上。结果显示，在CHF3中蚀刻时，GSST材料具有高分辨率的热阻特性以及对SiO2良好的蚀刻选择性，这与未来的纳米制造工艺兼容。
Ge1.5Sn0.5Sb2Te5 (GSST) can be easily induced to phase transition from amorphous state to crystalline state by a laser direct writing (LDW) system. The results show that the crystalline phase of GSST is more durable against acid solution corrosion than the amorphous phase. So nano-scale patterns and structures can be formed on the GSST film resists using laser-induced phase change and wet etching. Moreover, reactive ion etching (RIE) technology was applied to transfer these patterns onto the SiO2 substrate. The result shows to the extent that GSST material has thermal resist characteristics with high resolution and well etching selectivity to SiO2 when etched in the CHF3, which is compatibility with the future nanofabricate processing.