Enhanced thermal stability of laser diodes with shape-engineered quantum dot medium
Enhanced thermal stability of laser diodes with shape-engineered quantum dot medium
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DOI：
10.1063/1.1598645
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发表时间：
2003-07
影响因子：
4
通讯作者：
V. Tokranov;M. Yakimov;A. Katsnelson;M. Lamberti;S. Oktyabrsky
中科院分区：
文献类型：
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作者：
V. Tokranov;M. Yakimov;A. Katsnelson;M. Lamberti;S. Oktyabrsky
量子点（QD）的光学性质进行了优化的形状工程，通过调整的GaAs覆盖层的厚度之前，一个额外的加热步骤，导致QD截断。量子点与6 nm厚的覆盖层与随后的加热步骤被发现在室温下具有最高的光致发光强度和最低的发光带宽，29毫电子伏。1.22具有三层截断QD增益介质的μm边发射激光器表现出室温阈值电流密度为56 A/cm 2，饱和模式增益为16 cm−1。测得这些激光二极管具有极高的激射阈值特征温度，T0=380 K，高达55 °C，最大基态激射温度为219 °C。
Optical properties of the quantum dots (QDs) were optimized by shape engineering through the adjustment of the thickness of the GaAs overlayer prior to an additional heating step leading to QD truncation. QDs with a 6-nm-thick overlayer with the subsequent heating step were found to have the highest photoluminescence intensity at room temperature and the lowest luminescence bandwidth, 29 meV. 1.22 μm edge-emitting laser with a triple-layer truncated QD gain medium demonstrated room temperature threshold current density, 56 A/cm2, and saturated modal gain, 16 cm−1. An extremely high characteristic temperature for lasing threshold, T0=380 K up to 55 °C, and a maximum ground state lasing temperature of 219 °C were measured for these laser diodes.