Tensile Testing of Polycrystalline Silicon Thin Films Using Electrostatic Force Grip.
Tensile Testing of Polycrystalline Silicon Thin Films Using Electrostatic Force Grip.
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使用静电力夹具对多晶硅薄膜进行拉伸测试。
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
Y. Taga
中科院分区：
文献类型：
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作者：
T. Tsuchiya;O. Tabata;J. Sakata;Y. Taga
本文提出了一种新型薄膜拉伸测试仪。该拉伸测试仪具有利用静电力固定薄膜样品的夹具。该测试仪是在扫描电子显微镜 (SEM) 室中构建的。使用该测试仪测量了多晶硅（poly-Si）薄膜的拉伸强度。试样的测试部分长30-300μm，宽5μm，厚2μm。多晶硅薄膜的断裂呈脆性。平均拉伸强度为 2.0-2.6GPa，具体取决于测试部件的长度。多晶硅薄膜引发断裂的临界缺陷尺寸为28-47nm，远小于多晶硅薄膜的晶粒尺寸。
In this paper, a new tensile tester for thin films is presented. This tensile tester has a grip that fixes a thin film specimen using electrostatic force. The tester was constructed in a scanning electron microscope (SEM) chamber. Using this tester, the tensile strengths of polycrystalline silicon (poly-Si) thin films have been measured. The tested part of the specimen is 30-300μm long, 5μm wide and 2μm thick. The fracture of the poly-Si thin film was brittle. The mean tensile strength was 2.0-2.6GPa, depending on the length of the tested part. The size of the critical flaw that initiates fracture of the poly-Si thin film is 28-47nm, rather small than the grain size of the poly-Si thin film.