ELECTRICAL PROPERTIES OF Pt/BLT/HfSiON/Si STRUCTURE FOR 1T-TYPE FERROELECTRIC MEMORY
ELECTRICAL PROPERTIES OF Pt/BLT/HfSiON/Si STRUCTURE FOR 1T-TYPE FERROELECTRIC MEMORY
复制标题
1T型铁电存储器Pt/BLT/HfSiON/Si结构的电学特性
DOI：
10.1080/10584580600657591
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发表时间：
2006
影响因子：
0.7
通讯作者：
H. Ishiwara
中科院分区：
文献类型：
--
作者：
H. Hoko;Chieko Aoki;Y. Tabuchi;T. Tamura;Kenji Maruyama;Y. Arimoto;H. Ishiwara
以HfSiON为缓冲层，研制了金属-铁电-绝缘体-半导体场效应晶体管（MFISFET）。HfSiON薄膜是在高真空室中用电子束蒸发沉积的。HfSiON膜即使在O2气氛中在800°C下退火后也是非晶的。具有Pt/BLT（（Bi，La）4 Ti 3 O 12）/HfSiON/Si结构的MFIS二极管在电压在5 V和−5 V之间扫描时显示出具有0.5 V存储窗口的滞后回线。当二极管在滞后回线中偏置时，高和低电容值至少保持24小时。具有Pt/BLT（（Bi，La）4 Ti 3 O 12）/HfSiON/Si结构的P沟道MFIS FET在0.5 V存储窗口宽度下，当栅极电压在5 V和−5 V之间扫描时，显示出滞后Ids-Vg特性。
ABSTRACT Using HfSiON as a buffer layer, we fabricated metal-ferroelectric-insulator-semiconductor field-effect-transistor (MFIS FET). The HfSiON film was deposited in a high vacuum chamber with electron beam evaporation. A HfSiON film was amorphous even after annealing at 800°C in O2 atmosphere. MFIS diodes with a Pt/BLT((Bi,La)4Ti3O12)/HfSiON/Si structure showed hysteresis loop with a 0.5 V memory window when the voltage was swept between 5 V and −5 V. When the diode was biased in the hysteresis loop, the high and low capacitance values were kept at least for 24 hours. P-channel MFIS FET with a Pt/BLT((Bi,La)4Ti3O12)/HfSiON/Si structure showed the hysteretic Ids-Vg characteristic with 0.5 V memory window width, when a gate voltage was swept between 5 V and −5 V.