Interface bonding, chemical reactions, and defect formation at metal-semiconductor interfaces
Interface bonding, chemical reactions, and defect formation at metal-semiconductor interfaces
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DOI：
10.1116/1.2432348
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发表时间：
2007-07
期刊：
影响因子：
--
通讯作者：
L. Brillson
中科院分区：
文献类型：
--
作者：
L. Brillson
2006年的盖德-朗缪尔奖旨在表彰那些揭示了化学键合、反应和扩散对金属-半导体界面电性能的重要性的工作。除了表面科学研究，首先确定界面化学和电子性质之间的相关性，本文包括使用纳米级深度分辨技术，扩展这项工作在新的方向的结果。这些研究提供了在金属-半导体结中起作用的界面附近的化学诱导电子缺陷的代表性例子。化学与局部电子状态的相关性提出了新的方法来预测和控制肖特基势垒在纳米级制度。
The 2006 Gaede-Langmuir Award recognizes work that revealed the importance of chemical bonding, reactions, and diffusion on the electrical properties of metal-semiconductor interfaces. In addition to the surface science research that first identified correlations between interface chemical and electronic properties, this article includes results using nanoscale depth-resolved techniques that extend this work in new directions. These studies provide representative examples of chemically induced electronic defects near interfaces that play a role at metal-semiconductor junctions. Chemical correlations with local electronic states suggest new ways to predict and control Schottky barriers in the nanoscale regime.