Dielectric and Thermal Studies on New Phase Transition of CsHSeO 4
Dielectric and Thermal Studies on New Phase Transition of CsHSeO 4
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CsHSeO 4 新相变的介电和热学研究
DOI：
10.1143/jpsj.51.199
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发表时间：
1981
期刊：
影响因子：
--
通讯作者：
E. Nakamura
中科院分区：
文献类型：
--
作者：
M. Komukae;T. Osaka;Y. Makita;T. Ozaki;K. Itoh;E. Nakamura
测量了cshseo4的介电常数、比热和热膨胀随温度的变化，并进行了x射线检测。发现CsHSeO 4在128℃时发生相变。该晶体在室温下为单斜晶，空间群为P2/ c。由比热计算得到过渡熵为Δ S =16.1 J·mol -1℃-1。
The dielectric constant, specific heat and thermal expansion of CsHSeO 4 were measured as functions of temperature, and X-ray examination was also made. It was found that CsHSeO 4 undergoes a phase transition at 128°C. The crystal at room temperature is monoclinic with a space group P2/ c . The transition entropy was estimated from the specific heat to be Δ S =16.1 J·mol -1 deg -1 .