Impact of active layer design on InGaN radiative recombination coefficient and LED performance
Impact of active layer design on InGaN radiative recombination coefficient and LED performance
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DOI：
10.1063/1.3699199
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发表时间：
2012-03
影响因子：
3.2
通讯作者：
Xing Li;S. Okur;Fan Zhang;V. Avrutin;Ü. Özgür;H. Morkoç;S. M. Hong;S. Yen;T. Hsu;A. Matulionis
中科院分区：
文献类型：
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作者：
Xing Li;S. Okur;Fan Zhang;V. Avrutin;Ü. Özgür;H. Morkoç;S. M. Hong;S. Yen;T. Hsu;A. Matulionis
研究了辐射过程和非辐射过程以及极化场对蓝色（~ 425 nm） InGaN发光二极管（led）发光特性的影响。单双异质结构（DH）和多双异质结构（DH）的设计已被研究，多双异质结构显示出更高的效率。电子和空穴波函数重叠以及相应的辐射复合系数的数值模拟结果表明，通过采用以薄垒和低垒分隔的多个InGaN DH结构来增加有效活性区厚度，有望在高注入下实现led的高效保留。使用薄而低的屏障对于增强活跃区域的载流子运输至关重要。虽然将单DH厚度从3 nm增加到6 nm，由于态密度的增加和发射体积的增加，使峰值外量子效率（EQE）提高了近3.6倍，但内部量子效率却没有提高。
The relative roles of radiative and nonradiative processes and the polarization field on the light emission from blue (∼425 nm) InGaN light emitting diodes (LEDs) have been studied. Single and multiple double heterostructure (DH) designs have been investigated with multiple DH structures showing improved efficiencies. Experimental results supported by numerical simulations of injection dependent electron and hole wavefunction overlap and the corresponding radiative recombination coefficients suggest that increasing the effective active region thickness by employing multiple InGaN DH structures separated by thin and low barriers is promising for LEDs with high efficiency retention at high injection. The use of thin and low barriers is crucial to enhance carrier transport across the active region. Although increasing the single DH thickness from 3 to 6 nm improves the peak external quantum efficiency (EQE) by nearly 3.6 times due to increased density of states and increased emitting volume, the internal qua...