Synergy Effect of Particle Radiation and Ultraviolet Radiation from Capacitively Coupled Radio Frequency Argon Plasmas on n-GaN Etching Damage
Synergy Effect of Particle Radiation and Ultraviolet Radiation from Capacitively Coupled Radio Frequency Argon Plasmas on n-GaN Etching Damage
复制标题
电容耦合射频氩等离子体的粒子辐射和紫外辐射对 n-GaN 蚀刻损伤的协同效应
DOI：
10.1143/jjap.47.6863
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发表时间：
2008
影响因子：
1.5
通讯作者：
T. Mukai
中科院分区：
文献类型：
--
作者：
Retsuo Kawakami;T. Inaoka;K. Tominaga;Akinobu Kuwahara;T. Mukai
从射频等离子体中粒子辐射和紫外辐射的协同效应的角度研究了电容耦合射频Ar等离子体刻蚀n-GaN表面形貌的变化。随着气压从200 mTorr降低到10 mTorr，粒子辐射（特别是Ar+撞击在n-GaN上的能量）增强，而UV辐射（其峰值波长对应于GaN带隙能量）的强度显著减弱。当气体压力增加时，会出现相反的结果。每种类型的辐射都带来了类似于生长表面的光滑表面形态。然而，在50或100毫托，在这两种类型的辐射预计将共存，表面形态显示出各种类型的坑（缺陷或位错），这似乎是由协同效应引起的。
The change in the morphology of n-GaN surfaces etched by capacitively coupled RF Ar plasmas has been studied from the viewpoint of a synergy effect of particle radiation and UV radiation from the RF plasmas. The particle radiation (in particular, the energy of Ar+ impinging on n-GaN) is intensified with decreasing gas pressure from 200 to 10 mTorr, whereas the intensity of the UV radiation (whose peak wavelength corresponds to the GaN band-gap energy) is significantly weakened. The reverse result occurs when the gas pressure increases. Each type of radiation brings about a smooth surface morphology similar to that of the as-grown surface. However, at 50 or 100 mTorr, at which both types of radiation are expected to coexist, the surface morphology shows various types of pits (defects or dislocations), which seem to be induced by the synergy effect.