The role of point defects and arsenic precipitates in carrier trapping and recombination in low‐temperature grown GaAs
The role of point defects and arsenic precipitates in carrier trapping and recombination in low‐temperature grown GaAs
复制标题
DOI：
10.1063/1.116909
复制
发表时间：
1996-09
影响因子：
4
通讯作者：
Anthony Lochtefeld;M. Melloch;J. C. Chang;E. Harmon
中科院分区：
文献类型：
--
作者：
Anthony Lochtefeld;M. Melloch;J. C. Chang;E. Harmon
GaAs 外延层在各种过量砷浓度下生长，并进行各种退火，以研究点缺陷和砷沉淀物在载流子捕获和复合中的作用。在退火之前，点缺陷通常在亚皮秒时间尺度上快速捕获光生电子和空穴。然而，完全的电子空穴复合发生在明显更长的时间尺度上。退火后，完整的电子空穴复合寿命似乎大大降低，表明砷沉淀物发挥了重要作用。
GaAs epilayers were grown with a wide range of excess arsenic concentrations and subjected to various anneals to study the role of the point defects and arsenic precipitates in carrier trapping and recombination. Prior to anneal, the point defects rapidly trap photogenerated electrons and holes—usually on subpicosecond time scales. However, full electron‐hole recombination occurs on a significantly longer time scale. After anneal, the full electron‐hole recombination lifetime appears to be greatly reduced, indicating that the arsenic precipitates play a significant role.