Synthesis and Evaluation of Thick Films of Electrochemically Deposited Bi₂Te₃ and Sb₂Te₃ Thermoelectric Materials.
Synthesis and Evaluation of Thick Films of Electrochemically Deposited Bi₂Te₃ and Sb₂Te₃ Thermoelectric Materials.
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DOI：
10.3390/ma10020154
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发表时间：
2017-02-10
期刊：
影响因子：
--
通讯作者：
Ono T
中科院分区：
文献类型：
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作者：
Trung NH;Sakamoto K;Toan NV;Ono T
本文介绍了可用于热电发电机等应用的厚膜热电薄膜的合成和评价结果。对N型碲化铋(Bi2Te3)和P型碲化锑(Sb2Te3)的常压沉积和脉冲沉积两种电化学沉积方法进行了比较。因此，成功地合成了具有高Seebeck系数和低电阻率的块状结构的高度取向的Bi2Te3和Sb2Te3厚膜。获得了600微米厚的Bi2Te3和500微米厚的Sb2Te3薄膜。Bi2Te3和Sb2Te3薄膜的塞贝克系数分别为−150±20和170±20µV/K。此外，Bi2Te3的电阻率为15±5µΩm，Sb2Te3的电阻率为25±5Ωm。每种热电材料的功率因数分别达到15×10−4W/mk2和11.2×10−4W/mk2。
This paper presents the results of the synthesis and evaluation of thick thermoelectric films that may be used for such applications as thermoelectric power generators. Two types of electrochemical deposition methods, constant and pulsed deposition with improved techniques for both N-type bismuth telluride (Bi2Te3) and P-type antimony telluride (Sb2Te3), are performed and compared. As a result, highly oriented Bi2Te3 and Sb2Te3 thick films with a bulk-like structure are successfully synthesized with high Seebeck coefficients and low electrical resistivities. Six hundred-micrometer-thick Bi2Te3 and 500-µm-thick Sb2Te3 films are obtained. The Seebeck coefficients for the Bi2Te3 and Sb2Te3 films are −150 ± 20 and 170 ± 20 µV/K, respectively. Additionally, the electrical resistivity for the Bi2Te3 is 15 ± 5 µΩm and is 25 ± 5 µΩm for the Sb2Te3. The power factors of each thermoelectric material can reach 15 × 10−4 W/mK2 for Bi2Te3 and 11.2 × 10−4 W/mK2 for Sb2Te3.