Geiger-Mode Operation of GaN Avalanche Photodiodes Grown on GaN Substrates
Geiger-Mode Operation of GaN Avalanche Photodiodes Grown on GaN Substrates
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DOI：
10.1109/lpt.2009.2029073
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发表时间：
2009-08
影响因子：
2.6
通讯作者：
Suk Choi;H. Kim;Yun Zhang;Xiaogang Bai;D. Yoo;J. Limb;J. Ryou;S. Shen;P. D. Yoder;R. Dupuis
中科院分区：
文献类型：
--
作者：
Suk Choi;H. Kim;Yun Zhang;Xiaogang Bai;D. Yoo;J. Limb;J. Ryou;S. Shen;P. D. Yoder;R. Dupuis
在低位错密度自支撑GaN衬底上生长并制备了紫外（UV）GaN p-i-n雪崩光电二极管（APD）。GaN APD在线性模式下显示出稳定的雪崩倍增增益。在盖革模式操作在室温下与门控淬火，没有后脉冲效应观察到高达100 kHz。在265 nm处测得单光子探测效率和暗计数概率分别为${\sim}$1%和${\sim} 3\times 10^{- 2}$。
Ultraviolet (UV) GaN p-i-n avalanche photodiodes (APDs) on low dislocation density free-standing GaN substrates were grown and fabricated. The GaN APD showed a stable avalanche multiplication gain in a linear mode, using UV illumination. In Geiger-mode operation at room temperature with gated quenching, no after-pulsing effect was observed up to 100 kHz. The single-photon detection efficiency and dark-count probability were measured to be ${\sim}$1% and ${\sim} 3\times 10^{- 2}$ at 265 nm, respectively.