Pt Content Dependence of the Switching Field Distributions of CoPtCr-SiO$_{2}$ Perpendicular Media Characterized by Subtracting the Effect of Thermal Agitation
Pt Content Dependence of the Switching Field Distributions of CoPtCr-SiO$_{2}$ Perpendicular Media Characterized by Subtracting the Effect of Thermal Agitation
复制标题
通过减去热搅拌的影响来表征 CoPtCr-SiO$_{2}$ 垂直介质的转换场分布的 Pt 含量依赖性
DOI:
--
复制
发表时间:
2007
影响因子:
2.1
通讯作者:
Y. Nakamura
中科院分区:
文献类型:
--
作者:
T. Shimatsu;T. Kondo;K. Mitsuzuka;S. Watanabe;H. Aoi;H. Muraoka;Y. Nakamura
The switching field distributions (SFD) of CoPtCr-SiO<sub>2</sub> perpendicular media as a function of Pt content were characterized by subtracting the effect of thermal agitation, and discussed in relation to the microstructure. DC demagnetizing (DCD) magnetization curves and minor dc demagnetizing (M-DCD) magnetization curves were measured at applied field sweep rates of ~10 Oe/s and ~10<sup>8</sup> Oe/s. We estimated the width of SFD, DeltaSFD, from the difference between the DCD and M-DCD curves, and defined them as DeltaH<sub>r</sub>/H<sub>r </sub> (at ~ 10 Oe/s) and DeltaH<sub>r</sub> <sup>P</sup>/H<sub>r</sub> <sup>P</sup> (at ~10<sup>8</sup> Oe/s). The values of DeltaSFD characterized by subtracting the effect of thermal agitation, DeltaH <sub>0</sub>/H<sub>0</sub>, were nearly half those of DeltaH<sub>r </sub>/H<sub>r</sub> for 10-nm-thick media. DeltaH<sub>0</sub>/H<sub>0 </sub> was about 0.10 at 10 at%Pt content, and increased as the Pt content increased, reaching 0.17 at 30 at%Pt content. The increase in DeltaH<sub>0</sub>/H<sub>0</sub> was probably caused by an increase in the stacking fault density and the formation of fcc layers in the hcp CoPtCr lattice. A simple calculation based on the coherent switching of magnetization revealed that the c-axis distribution results in DeltaH <sub>0</sub>/H<sub>0</sub> of about 0.08, independent of Pt content. These results suggest that the DeltaSFD due to the grain-to-grain anisotropy field variation was small, only 0.02-0.03