Vertical nanowire transistor in flexible polymer foil
Vertical nanowire transistor in flexible polymer foil
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DOI：
10.1063/1.1587258
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发表时间：
2003-06
影响因子：
4
通讯作者：
Jie Chen;R. Könenkamp
中科院分区：
文献类型：
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作者：
Jie Chen;R. Könenkamp
报道了一种垂直纳米线场效应晶体管的制作和工作。该装置通过在聚合物箔堆叠的圆柱形孔中生长垂直线来制备。纳米线直径约为100 nm，堆积密度高达108 cm−2。聚合物箔叠层由两个聚合物层和一个中间金属层组成。圆柱形孔制备在这个堆栈中，通过使用快速离子辐照和随后的蚀刻。获得了直径在50和150 nm之间的轮廓分明的圆柱形开口。半导体生长涉及p型四元化合物CuSCN的电沉积。对第一器件的电气测量显示晶体管动作与一些栅极泄漏，这可能会在未来的设计中得到改善。嵌入软聚合物基质中的无机器件材料的布置在结构上是稳健的，并且器件对箔的机械应变显示出低灵敏度。当器件尺寸进一步增大时，可望出现单电子效应。
Fabrication and operation of a vertical nanowire field-effect transistor is reported. The device is prepared by growing vertical wires in the cylindrical pores of a polymer foil stack. The nanowire diameter is approximately 100 nm, the packing density up to 108 cm−2. The polymer foil stack consists of two polymer layers and an intermediate metal layer. Cylindrical holes are prepared in this stack by using fast ion irradiation and subsequent etching. Well-defined cylindrical openings with diameters between 50 and 150 nm are obtained. The semiconductor growth involves electrodeposition of the p-type quaternary compound CuSCN. Electrical measurements on first devices show transistor action with some gate leakage, which may be improved in future designs. The arrangement of inorganic device material embedded in soft polymer matrix is structurally robust, and the devices show low sensitivity to mechanical strain of the foil. Single electron effects may be expected in these devices, when the dimensions are furth...